Plasma processing apparatus

A plasma processing apparatus, comprising:

• a chamber configured to provide a processing space in the chamber;
• a substrate support provided inside the processing space;
• an upper electrode provided above the substrate support with the processing space interposed between the upper electrode and the substrate support;
• an emitter provided to emit electromagnetic waves into a plasma generation space and extending in a circumferential direction around a central axis of the chamber and the processing space;
• and
• a waveguide configured to supply the electromagnetic waves to the emitter,
• wherein the waveguide includes a resonator configured to provide a waveguide path,
• wherein the resonator includes a first short-circuiting portion constituting a first end of the waveguide path of the resonator and a second short-circuiting portion constituting a second end of the waveguide path of the resonator,
• wherein the second end of the waveguide path of the resonator is electromagnetically coupled to the emitter, and
• wherein the second short-circuiting portion has a capacitance that short-circuits the waveguide path at a frequency of the electromagnetic waves.