US 12,437,970 B2Granted

Plasma processing method and plasma processing apparatus

AssigneeTokyo Electron Limited

InventorsChishio Koshimizu, Shin Hirotsu, Takenobu Ikeda, Koichi Nagami, Shinji Himori

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Abstract

A plasma processing method according to an exemplary embodiment includes applying a first direct-current voltage to a lower electrode of a substrate support provided in a chamber of a plasma processing apparatus, in a first period during generation of plasma in the chamber. The plasma processing method further includes applying a second direct-current voltage to the lower electrode in a second period different from the first period during generation of plasma in the chamber. The second direct-current voltage has a level different from a level of the first direct-current voltage. The second direct-current voltage has a same polarity as a polarity of the first direct-current voltage.

Claims15

Dependent claims

A plasma processing apparatus comprising:

a plasma processing chamber;
a substrate support disposed in the plasma processing chamber;
a first DC power source configured to generate a first DC voltage having a first voltage level;
a second DC power source configured to generate a second DC voltage having a second voltage level different from the first voltage level, the second DC voltage having a same polarity as a polarity of the first DC voltage;
a first switch configured to switch between a first conduction state and a first non-conduction state, the substrate support being connected to the first DC power source in the first conduction state and disconnected from the first DC power source in the first non-conduction state;
a second switch configured to switch between a second conduction state and a second non-conduction state, the substrate support being connected to the second DC power source in the second conduction state and disconnected from the second DC power source in the second non-conduction state;
a third switch configured to switch between a third conduction state and a third non-conduction state, the substrate support being connected to a reference potential in the third conduction state and disconnected from the reference potential in the third non-conduction state;
and
a controller configured to cause:
the first conduction state of the first switch and the second non-conduction state of the second switch during a first period of a repeating sequence;
and
the first non-conduction state of the first switch and the second conduction state of the second switch during a second period of the repeating sequence,
wherein the controller is configured to control the first switch, the second switch and the third switch to cause:
the first conduction state, the second non-conduction state and the third non-conduction state during the first period of the repeating sequence;
the first non-conduction state, the second conduction state and the third non-conduction state during the second period of the repeating sequence;
and
the first non-conduction state, the second non-conduction state and the third conduction state during a third period of the repeating sequence between the first period and the second period.

14 more elements

A plasma processing apparatus comprising:

a plasma processing chamber;
a substrate support disposed in the plasma processing chamber;
a DC power source configured to generate a DC voltage;
a first switch configured to switch between a first conduction state and a first non-conduction state, the substrate support being connected to the DC power source in the first conduction state and disconnected from the DC power source in the first non-conduction state;
a second switch configured to switch between a second conduction state and a second non-conduction state, the substrate support being connected to a reference potential in the second conduction state and disconnected from the reference potential in the second non-conduction state;
and
a controller configured to cause:
maintaining, during a first period, the first conduction state of the first switch and the second non-conduction state of the second switch so as to increase a potential of the substrate support;
and
maintaining, during a second period, the first non-conduction state of the first switch and the second conduction state of the second switch so as to decrease the potential of the substrate support,
wherein the first period and the second period are repeated in an alternating manner so as to transition from the first period to the second period before the substrate support is reached to a maximum potential.

8 more elements

Dependencies are inferred from the claim text.

Facts

Application: 18/448,077Filed 10 Aug 2023 · continuation
Priority: JP 2019-09924928 May 2019
Published: US 2024/0006154 A14 Jan 2024
Granted: 7 Oct 2025
Term ends: Not estimatedThe source records don’t support an estimate.

Classification8 codes

H01J 37/32183
Circuits specially adapted for controlling the RF discharge: matching circuits
H01H 1/46
By sliding: self-aligning contacts
H01J 37/32568
Electrodes: relative arrangement or disposition of electrodes; moving means
H01J 37/32715
Constructional details of the reactor: workpiece holder

Family

Application16/878,098Parent of this continuation · filed 19 May 2020
US 2024/0006154 A1Pre-grant publication · published 4 Jan 2024
US 11,764,034 B2Parent of this continuation
US 2020/0381215 A1Published application
US 12,437,970 B2This patent

From the US filing history. Foreign family members aren’t listed.