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US 12,437,933 B2Granted
Controlled heating rate baking protocol for the synthesis of bismuth vanadate thin films
AssigneeCity University of Hong Kong
InventorsRuiqin Zhang, Rafiqat Ui Rasool
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Abstract
A method for fabricating a film on a substrate and a method for controlling the heating rate of a plurality of nanoparticles to transform the plurality of nanoparticles into a plurality of nanorods and nano-cone structures includes the steps of providing a sol precursor, providing a substrate, depositing the sol precursor onto the substrate via a sol-gel technique, annealing the sol precursor under ambient pressure at a controlled heating rate, and cooling down the sol precursor to form a film.
Claims5
A method for fabricating a film on a substrate comprising the steps of,
- (a) providing a sol precursor, wherein the sol precursor is a viscosity enhanced solution;
- (b) providing a substrate;
- (c) depositing the sol precursor onto the substrate via a sol-gel technique comprising a single-coating step;
- (d) annealing, without first drying, the deposited sol precursor under ambient pressure at a controlled heating rate in a muffle furnace at a temperature of from about 400° C. to about 500° C., wherein the controlled heating rate is from about 30° C./min to about 70° C./min;
- and
- (e) cooling down the sol precursor to form the film.
3 more elements
Dependencies are inferred from the claim text.