Optical filter structure of arbitrary combination of UV, R, G, B, and IR, and manufacturing method thereof

An optical filter structure of arbitrary combination of ultraviolet (UV), red (R), green (G), blue (B), and infrared (IR), comprising:

• a substrate, which is one of a wafer semiconductor sensor device and a product of a light-transmitting device;
• and
• a filter layer, which is formed on a surface of the substrate and is formed of a plurality of basic units arranged in an array, wherein each of the basic units comprises a plurality of pixel filter films formed through vacuum coating, and the plurality of pixel filter films comprise an arbitrary combination of a ultraviolet (UV) pixel filter film, a red (R) pixel filter film, a green (G) pixel filter film, a blue (B) pixel filter film, and an infrared (IR) pixel filter film, such that the plurality of pixel filter films allow light of corresponding wavelengths to pass therethrough;
• wherein:
• the UV pixel filter film is formed by alternately stacking a plurality of rubidium (Rb) layers and a plurality of high refractive index layers having refractive indexes higher than the rubidium (Rb) layers, wherein each of the layers has a unique arrangement of thickness to form a passband in a wavelength range of 300 nm to 1100 nm, the passband having a central wavelength of 300 nm to 400 nm, and remaining being cut off, the passband central wavelength having transmittance greater than 50% at an incident angle of 0°, a cut-off band having transmittance averagely lower than 1%;
• the R pixel filter film is formed by alternately stacking a plurality of rubidium (Rb) layers and a plurality of high refractive index layers having refractive indexes higher than the rubidium (Rb) layers, wherein each of the layers has a unique arrangement of thickness to form a passband in a wavelength range of 300 nm to 1100 nm, the passband having a central wavelength of 580 nm to 740 nm, and remaining being cut off, the passband central wavelength having transmittance greater than 55% at an incident angle of 0°, the cut-off band having transmittance lower than 1%;
• the G pixel filter film is formed by alternately stacking a plurality of rubidium (Rb) layers and a plurality of high refractive index layers having refractive indexes higher than the rubidium (Rb) layers, wherein each of the layers has a unique arrangement of thickness to form a passband in a wavelength range of 300 nm to 1100 nm, the passband having a central wavelength of 500 nm to 565 nm, and remaining being cut off, the passband central wavelength having transmittance greater than 55% at an incident angle of 0°, the cut-off band having transmittance lower than 1%;
• the B pixel filter film is formed by alternately stacking a plurality of rubidium (Rb) layers and a plurality of high refractive index layers having refractive indexes higher than the rubidium (Rb) layers, wherein each of the layers has a unique arrangement of thickness to form a passband in a wavelength range of 300 nm to 1100 nm, the passband having a central wavelength of 400 nm to 500 nm, and remaining being cut off, the passband central wavelength having transmittance greater than 55% at an incident angle of 0°, the cut-off band having transmittance lower than 1%;
• and
• the IR pixel filter film is formed by alternately stacking a plurality of rubidium (Rb) layers and a plurality of high refractive index layers having refractive indexes higher than the rubidium (Rb) layers, so as to form a passband in a wavelength range of 300 nm to 1100 nm, the central wavelength in a wavelength range of infrared 800 nm to 1100 nm only having a portion or partly overlapped to form a passband, remaining being a cut-off band having transmittance lower than 1%, transmittance of the passband central wavelength being greater than 30% at an incident angle of 0°.