Intelligent wide-area five-wire oxygen sensor chip and manufacturing method thereof

An intelligent wide-area five-wire oxygen sensor chip, comprising:

• a base layer, wherein the base layer has a four-layer structure, and comprises a first base layer, a second base layer, a third base layer and a fourth base layer in sequence from bottom to top;
• an outer electrode disposed above the fourth base layer and configured to contact with oxygen to measure oxygen concentration;
• a reference electrode disposed below the third base layer and configured to receive electrons in oxygen and interact with an electrolyte between the outer electrodes and the reference electrode to form a current;
• a pump electrode, wherein the pump electrode comprises an upper pump electrode and a lower pump electrode, a pump electrode mixing cavity is provided between the upper pump electrode and the lower pump electrode, the pump electrode mixing cavity penetrates two sides of the third base layer, and a width of the pump electrode mixing cavity is the same as a width of the third base layer;
• a pump electrode diffusion barrier disposed below the pump electrode mixing cavity;
• a heater layer disposed between the first base layer and the second base layer;
• and
• wherein the pump electrode diffusion barrier is printed in the third base layer to control and adjust diffusion of oxygen in the pump oxygen cavity, the surface of the base layer is provided with a layer of tetracobalt trioxide ultrathin nanostructure formed by converting cobalt hydroxide nanostructures.