Semiconductor analysis system

A semiconductor analysis system comprising:

• a machining device that machines a semiconductor wafer to prepare a thin film sample for observation;
• a transmission electron microscope device that acquires a transmission electron microscope image of the thin film sample;
• and
• a control device that controls the machining device and the transmission electron microscope device,
• wherein the control device evaluates the thin film sample based on the transmission electron microscope image, updates acquisition conditions of the transmission electron microscope image based on an evaluation result of the thin film sample, outputs the updated acquisition conditions to the transmission electron microscope device, and
• uses the updated acquisition conditions to acquire a transmission electron microscope image of a thin film sample different from the thin film sample;
• wherein the control device detects from the transmission electron microscope image a position of a thin film machining area in the thin film sample, compares the detected position of the thin film machining area with a set position of the thin film machining area, and calculates an amount of misalignment of the detected position with respect to the set position, wherein the evaluation result includes the amount of misalignment;
• and
• wherein the control device calculates, from the transmission electron microscope image, an amount of damage of the thin film sample due to machining based on a thickness of a damaged layer of the thin film sample, wherein the evaluation result includes the amount of damage.