Substrate processing method, method of manufacturing semiconductor device, non-transitory computer-readable recording medium and substrate processing apparatus
AssigneeKokusai Electric Corporation
InventorsTakahiro Miyakura, Atsushi Moriya, Yasuhiro Megawa, Yasunobu Koshi, Akito Hirano
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Abstract
There is provided a technique that includes: (a) forming a first film containing a Group 14 element on a substrate at a film-forming temperature; (b) performing a crystal growth of the first film by performing a heat treatment to the first film at a first temperature; and (c) moving the Group 14 element contained in at least part of the first film toward the substrate to crystallize the first film by performing the heat treatment to the first film at a second temperature higher than the first temperature.
Claims20
A substrate processing method comprising:
- (a) forming a first film containing a Group 14 element on a substrate at a film-forming temperature;
- (b) performing a crystal growth of the first film by performing a heat treatment to the first film at a first temperature;
- and
- (c) moving the Group 14 element contained in at least part of the first film toward the substrate to crystallize the first film by performing the heat treatment to the first film at a second temperature higher than the first temperature.
A non-transitory computer-readable recording medium storing a program that causes a substrate processing apparatus, by a computer, to perform:
- (a) forming a first film containing a Group 14 element on a substrate at a film-forming temperature;
- (b) performing a crystal growth of the first film by performing a heat treatment to the first film at a first temperature;
- and
- (c) moving the Group 14 element contained in at least part of the first film toward the substrate to crystallize the first film by performing the heat treatment to the first film at a second temperature higher than the first temperature after (b).
A substrate processing apparatus comprising:
- a first supplier through which a Group 14 element-containing gas is supplied to a substrate;
- a heater configured to heat the substrate;
- and
- a controller configured to control the first supplier and the heater so as to perform:
- (a) forming a first film containing a Group 14 element on the substrate at a film-forming temperature,
- (b) performing a crystal growth of the first film by performing a heat treatment to the first film at a first temperature, and
- (c) moving the Group 14 element contained in at least part of the first film toward the substrate to crystallize the first film by performing the heat treatment to the first film at a second temperature higher than the first temperature.
Dependencies are inferred from the claim text.