Boron-doped carbon nanotubes synthesized by arc discharge and method of manufacturing the same
AssigneeIndustry-Academia Cooperation Group of Sejong University
InventorsNae Sung Lee, Syed Muhammad Zain Mehdi
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Abstract
Disclosed are a multi-wall carbon nanotube (MWCNT) formed using arc discharge and a method for manufacturing the same. The carbon source of the anode and boron that is the doping source, are evaporated through arc discharge and then deposited on the surface of the cathode to form MWCNTs, and boron is evenly distributed in the multi-walls of the MWCNTs. Therefore, the outer diameter of the MWCNT is reduced, high thermal stability is secured, and the effect of improving the field emission characteristics can be obtained.
Claims12
A multi-walled carbon nanotube (MWCNT) doped with boron and having a reduced outer diameter compared to an undoped carbon nanotube, wherein the outer diameter of the doped MWCNT has a value of 4 nm to 20 nm, wherein the MWCNT has 10.4 or less as average crystallinity evaluation index on a Raman spectrum.
A method of manufacturing a MWCNT comprising:
- generating an arc discharge by applying a voltage between anode and cathode spaced apart from each other;
- evaporating graphite powder to make carbon vapor and boron powder to make boron vapor at the anode close to the cathode by the arc discharge;
- and
- forming boron-doped carbon nanotube by depositing the carbon vapor and the boron vapor on surface of the cathode,
- wherein the anode and the cathode are made of graphite, and
- wherein the anode comprises:
- a filled region having a hole that is formed from a surface facing the cathode and is filled with a mixed powder of the graphite powder and the boron powder;
- and
- a bulk region extending from the filled region,
- wherein the boron powder has a content of 0.02 wt % to 0.04 wt % based on the sum of the mixed powder and the graphite surrounding the hole.
Dependencies are inferred from the claim text.