Method to produce a 3D multilayer semiconductor device and structure

A method of making a 3D multilayer semiconductor device, the method comprising:

• providing a first substrate comprising a first level, said first level comprising a first single crystal silicon layer;
• providing a second substrate comprising a second level, said second level comprising a second single crystal silicon layer;
• performing an epitaxial growth of a SiGe layer on top of said second single crystal silicon layer;
• performing an epitaxial growth of a third single crystal silicon layer on top of said SiGe layer;
• forming a plurality of second transistors each comprising a single crystal channel;
• forming a plurality of metal layers interconnecting said plurality of second transistors;
• and then
• performing a bonding of said second level onto said first level,
• wherein performing said bonding comprises making oxide-to-oxide bond zones;
• performing removal of a majority of said second single crystal silicon layer;
• and
• processing a through layer via substantially through said third single crystal silicon layer.

A method of making a 3D multilayer semiconductor device, the method comprising:

• providing a first substrate comprising a first level, said first level comprising a first single crystal silicon layer;
• providing a second substrate comprising a second level, said second level comprising a second single crystal silicon layer;
• performing an epitaxial growth of a SiGe layer on top of said second single crystal silicon layer;
• performing an epitaxial growth of a third single crystal silicon layer on top of said SiGe layer;
• performing etching of at least a portion of said SiGe layer;
• forming a plurality of second transistors each comprising a single crystal channel;
• forming a plurality of metal layers interconnecting said plurality of second transistors;
• and then
• performing a bonding of said second level onto said first level,
• wherein performing said bonding comprises making oxide-to-oxide bond zones;
• and
• performing removal of a majority of said second single crystal silicon layer.