Electrically programmable fuse over lateral bipolar transistor
AssigneeGlobalFoundries U.S. Inc.
InventorsAnindya Nath, Ephrem G. Gebreselasie, Rajendran Krishnasamy, Alain F. Loiseau
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Abstract
Embodiments of the disclosure provide a circuit structure including an electrically programmable fuse (efuse) and lateral bipolar transistor. A structure of the disclosure includes a lateral bipolar transistor within a semiconductor layer and over a substrate. An insulator layer is over a portion of the semiconductor layer. An efuse structure is within a polycrystalline semiconductor layer and over the insulator layer. The efuse structure is over a current path through the lateral bipolar transistor.
Claims17
A structure comprising:
- a lateral bipolar transistor within a semiconductor layer and over a substrate;
- an insulator layer over a portion of the semiconductor layer, wherein a separation distance between an emitter of the lateral bipolar transistor and a first sidewall of the insulator layer is larger than a separation distance between a collector of the lateral bipolar transistor and a second sidewall of the insulator layer;
- and
- an electrically programmable fuse (efuse) structure within a polycrystalline semiconductor layer and over the insulator layer, wherein the efuse structure is over a current path through the lateral bipolar transistor, and the insulator layer electrically isolates the efuse structure from the current path.
A structure comprising:
- a crystalline semiconductor layer over a substrate;
- a lateral bipolar transistor defined within the crystalline semiconductor layer;
- an insulator layer over a portion of the crystalline semiconductor layer, wherein a separation distance between an emitter of the lateral bipolar transistor and a first sidewall of the insulator layer is larger than a separation distance between a collector of the lateral bipolar transistor and a second sidewall of the insulator layer;
- a polycrystalline semiconductor layer on the insulator layer;
- and
- an electrically programmable fuse (efuse) structure defined within the polycrystalline semiconductor layer and over the insulator layer, wherein a vertical thickness of the insulator layer electrically isolates the efuse structure and the lateral bipolar transistor, and wherein the efuse structure is over a current path through the lateral bipolar transistor.
A structure comprising:
- a first lateral bipolar transistor within a semiconductor layer and over a substrate;
- an insulator layer over a portion of the semiconductor layer, wherein a separation distance between an emitter of the first lateral bipolar transistor and a first sidewall of the insulator layer is larger than a separation distance between a collector of the first lateral bipolar transistor and a second sidewall of the insulator layer;
- a second lateral bipolar transistor within a polycrystalline semiconductor layer and over the insulator layer;
- and
- an electrically programmable fuse (efuse) structure within the polycrystalline semiconductor layer and over the insulator layer, wherein a cathode of the efuse structure is adjacent one of an emitter and a collector of the second lateral bipolar transistor, and the efuse structure is over a current path through the first lateral bipolar transistor, and the insulator layer electrically isolates the efuse structure from the current path.
Dependencies are inferred from the claim text.