Bonded semiconductor devices having processor and dynamic random-access memory and methods for forming the same

A semiconductor device, comprising:

• a first semiconductor structure comprising a processor, an array of static random-access memory (SRAM) cells, and a first bonding layer comprising first bonding contacts and a first dielectric layer isolating the first bonding contacts;
• and
• a second semiconductor structure comprising an array of dynamic random-access memory (DRAM) cells, and a second bonding layer comprising second bonding contacts and a second dielectric layer isolating the second bonding contacts,
• wherein the first bonding layer is bonded to the second bonding layer, and the first bonding contacts of the first semiconductor structure are in contact with the second bonding contacts of the second semiconductor structure;
• and
• wherein the first semiconductor structure further comprises:
• a substrate, the processor and the array of SRAM cells being disposed on the substrate, and the processor being outside of the array of SRAM cells;
• and
• a first peripheral circuit on the substrate, the first peripheral circuit and the processor being outside the array of SRAM cells.