Semiconductor device and method of forming RDL with graphene-coated core

A semiconductor device, comprising:

• a substrate;
• and
• a redistribution layer (RDL) including a plurality of graphene core shells formed over a first surface of the substrate, wherein each graphene core shell of the plurality of graphene core shells contacts another graphene core shell to form a continuous electrical path through the graphene core shells between a first surface of the RDL and a second surface of the RDL opposite the first surface of the RDL.

A method of making a semiconductor device, comprising:

• providing a substrate;
• and
• forming a redistribution layer (RDL) including a plurality of graphene core shells over a first surface of the substrate, wherein each graphene core shell of the plurality of graphene core shells contacts another graphene core shell to form a continuous electrical path through the graphene core shells between a first surface of the RDL and a second surface of the RDL opposite the first surface of the RDL.

A semiconductor device, comprising:

• a substrate;
• and
• a conductive layer including a plurality of graphene core shells formed over a first surface of the substrate, wherein each graphene core shell of the plurality of graphene core shells contacts another graphene core shell to form a continuous electrical path through the graphene core shells.