Electrostatic chuck and method of manufacturing the same
AssigneeTemnest Inc.
InventorsHae Ran Kim, Young Jae Jeon, Jae Hyun Lee
Life of this patent
Estimating the term…
Abstract
The present disclosure relates to an electrostatic chuck and a method of manufacturing the same. A problem in that the yield of a wafer is reduced due to a partial destruction phenomenon attributable to thermal expansion of an electrostatic chuck is solved and the lifespan of a wafer is increased by making a coefficient of thermal expansion of a lower plate of an electrostatic chuck similar to a coefficient of thermal expansion of an upper plate of the electrostatic chuck.
Claims8
An electrostatic chuck comprising an upper plate made of ceramic and having a wafer seated therein, a lower plate bonded to the upper plate, and an adhesive for bonding the upper plate and the lower plate together,
- wherein the lower plate is sintered and molded at a high temperature under vacuum and pressurization by mixing first powder comprising at least one of aluminum, stainless steel, titanium, and magnesium and second powder comprising at least one of silicon-carbide (SiC), silicon nitride (Si3N4), silicon, diamond, carbon nanotubes, and graphene, and
- a mixing ratio of the first powder and the second powder is 4:6 to 6:4,
- wherein a ratio of a particle size of the first powder and the second powder is 1:0.05 to 1:0.4, and
- wherein a coefficient of thermal expansion of the lower plate is 12*10−6/K to 13*10−6/K.
A method of manufacturing an electrostatic chuck comprising an upper plate made of ceramic and having a wafer seated therein, a lower plate bonded to the upper plate, and an adhesive for bonding the upper plate and the lower plate together,
- wherein the lower plate is manufactured by:
- a first step of preparing first powder comprising at least one of aluminum, stainless steel, titanium, and magnesium;
- a second step of preparing second powder comprising at least one of silicon-carbide (SiC), silicon nitride (Si3N4), silicon, diamond, carbon nanotubes, and graphene;
- a third step of mixing the first powder and the second powder;
- and
- a fourth step of producing a molding body of the lower plate by sintering and molding the mixed powder at a high temperature under vacuum and pressurization, and
- a ratio of the first powder and the second powder that are mixed in the third step is 4:6 to 6:4,
- wherein a ratio of a particle size of the first powder and the second powder is 1:0.05 to 1:0.4, and
- wherein a coefficient of thermal expansion of the lower plate is 12*10−6/K to 13*10−6/K.
Dependencies are inferred from the claim text.