High energy implanter with small footprint

A high-energy ion implantation system comprising:

• an ion source configured to form an ion beam along a beam path;
• a mass analyzer configured to mass analyze the ion beam along the beam path;
• a first RF linear accelerator configured to receive the ion beam at a first accelerator entrance thereof from the mass analyzer and to accelerate the ion beam to a first accelerator exit along the beam path;
• a second RF linear accelerator configured to receive the ion beam at a second accelerator entrance thereof and to accelerate the ion beam to a second accelerator exit along the beam path;
• a first magnet disposed between the first accelerator exit and the second accelerator entrance along the beam path, wherein the first magnet is configured to alter a trajectory of the beam path by approximately 180° along a first plane;
• a third RF linear accelerator configured to receive the ion beam at a third accelerator entrance thereof and to accelerate the ion beam to a third accelerator exit along the beam path;
• a second magnet disposed between the second accelerator exit and the third accelerator entrance along the beam path, wherein the second magnet is configured to alter the trajectory of the beam path by approximately 180° along a second plane;
• a beam shaping apparatus having a beam shaping entrance and a beam shaping exit along the beam path, wherein the beam shaping apparatus is configured to define a shape of the ion beam along the beam path;
• and
• a third magnet disposed between the third accelerator exit and the beam shaping entrance along the beam path, wherein the third magnet is configured to alter the trajectory of the beam path by approximately 180° along a third plane, and wherein the first plane, the second plane, and the third plane are not coplanar.