Ceramic component and plasma etching apparatus comprising same
AssigneeSolmics Co., Ltd.
InventorsSurgSic Hwang, Junrok Oh, Kyungyeol Min, Kyungin Kim, Jungkun Kang, Younguk Han
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Abstract
A ceramic component included in a plasma etching apparatus, wherein a surface of the ceramic component may include a base material and a composite material disposed in contact with the base material, wherein a resistivity of the ceramic component may be 10−1 Ω·cm to 20 Ω·cm, and wherein the base material may include a first boron carbide-based material and the composite material may include at least one selected from the group consisting of a second boron carbide-based material, a carbon-based material, and combinations thereof, is disclosed.
Claims19
A ceramic component comprised in a plasma etching apparatus,
- wherein a surface of the ceramic component comprises a base material and a composite material disposed in contact with the base material,
- wherein a resistivity of the ceramic component is 10−1 Ω·cm to 20 Ω·cm, and
- wherein the base material comprises a first boron carbide-based material and the composite material comprises at least one selected from the group consisting of a second boron carbide-based material, a carbon-based material, and combinations thereof,
- wherein the second boron carbide-based material of the composite material has an Iab/Icd ratio of 1.0 to 1.8, where the Iab/Icd ratio is a ratio of a sum (Iab) of strengths of peaks near 481 cm−1 (Ia) and strengths of peaks near 534 cm−1 (Ib) to a sum (Icd) of strengths of peaks near 270 cm−1 (Ic) and strengths of peaks near 320 cm−1 (Id), in a Raman shift spectrum measured through Raman spectroscopy,
- wherein the carbon-based material of the composite material has an Ie/If ratio of 0.2 to 2, where the Ie/If ratio is a ratio of a strength of G band peak (Ie) to a strength of D band peak (If), in the Raman shift spectrum.
A ceramic component comprised in a plasma etching apparatus,
- wherein a surface of the ceramic component comprises a base material and a composite material disposed in contact with the base material,
- wherein a resistivity of the ceramic component is 10−2 Ω·cm to 10−1 Ω·cm, and
- wherein the base material comprises a first boron carbide-based material and the composite material comprises at least one selected from the group consisting of a second boron carbide-based material, boron oxide, and combinations thereof,
- wherein the second boron carbide-based material of the composite has an Iab/Icd ratio of 1 to 1.8, where a ratio of a sum (Iab) of strengths of peaks near 481 cm−1 (Ia) and strengths of peaks near 534 cm−1 (Ib) to a sum (Icd) of strengths of peaks near 270 cm−1 (Ic) and strengths of peaks near 320 cm−1(Id), in a Raman shift spectrum measured through Raman spectroscopy.
A method of manufacturing a ceramic component comprising:
- preparing at least one raw material selected from the group consisting of a first raw material comprising boron carbide, a second raw material comprising boron carbide, boron oxide, and a carbon-based material, and a third raw material comprising boron carbide and a carbon-based material;
- and
- preparing the ceramic component by sintering and shaping machining the at least one raw material,
- wherein the preparing the at least one raw material comprises preparing raw material grains by slurrying and granulating the at least one raw material,
- wherein the at least one raw material after the slurrying has a zeta potential of +15 mV or more.
Dependencies are inferred from the claim text.