Semiconductor components and semiconductor structures and methods of fabrication

A semiconductor component for fabricating semiconductor structures comprising:

• a plate having an elastomeric polymer layer thereon;
• and
• a semiconductor structure on the plate, the semiconductor structure comprising:
• a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer;
• a plurality of mesas comprising separated portions of the first semiconductor layer, the second semiconductor layer and the active layer, the mesas including a shorting mesa and a non-shorting mesa, the non-shorting mesa configured to apply a current to the active layer for generating photon/light in a first portion of the active layer of the non-shorting mesa;
• and
• a strapping metal layer on the shorting mesa electrically connecting the second semiconductor layer to the first semiconductor layer providing a short circuit for the current and no photon/light generated by a second portion of the active layer of the shorting mesa;
• wherein the semiconductor structure comprises a light emitting diode (LED) die comprising a mini or micro (LED) die having a width (W) and a length (L) of less than 150μm. and a thickness (T) of less than 5μm.

A semiconductor component for fabricating semiconductor structures comprising:

• a plate having an elastomeric polymer layer thereon;
• and
• a semiconductor structure on the plate, the semiconductor structure comprising:
• a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer;
• a plurality of mesas comprising separated portions of the first semiconductor layer, the second semiconductor layer and the active layer, the mesas including a shorting mesa and a non-shorting mesa, the non-shorting mesa configured to apply a current to the active layer for generating photon/light in a first portion of the active layer of the non-shorting mesa;
• and
• a strapping metal layer on the shorting mesa electrically connecting the second semiconductor layer to the first semiconductor layer providing a short circuit for the current and no photon/light generated by a second portion of the active layer of the shorting mesa;
• wherein the plate includes a laser lift off (LLO) area containing a plurality of semiconductor components on the elastomeric polymer layer.

A semiconductor component for fabricating semiconductor structures comprising:

• a plate having an elastomeric polymer layer thereon;
• and
• a semiconductor structure on the plate, the semiconductor structure comprising:
• a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer;
• a plurality of mesas comprising separated portions of the first semiconductor layer, the second semiconductor layer and the active layer, the mesas including a shorting mesa and a non-shorting mesa, the non-shorting mesa configured to apply a current to the active layer for generating photon/light in a first portion of the active layer of the non-shorting mesa;
• and
• a strapping metal layer on the shorting mesa electrically connecting the second semiconductor layer to the first semiconductor layer providing a short circuit for the current and no photon/light generated by a second portion of the active layer of the shorting mesa;
• wherein the semiconductor component has a thickness of less than 50μm, a width (W) of less than 200μm and a length (L) of less than 200μm.

A semiconductor component for fabricating semiconductor structures comprising:

• a plate having an elastomeric polymer layer thereon;
• and
• a semiconductor structure on the plate, the semiconductor structure comprising:
• a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer;
• a plurality of mesas comprising separated portions of the first semiconductor layer, the second semiconductor layer and the active layer, the mesas including a shorting mesa and a non-shorting mesa, the non-shorting mesa configured to apply a current to the active layer for generating photon/light in a first portion of the active layer of the non-shorting mesa;
• and
• a strapping metal layer on the shorting mesa electrically connecting the second semiconductor layer to the first semiconductor layer providing a short circuit for the current and no photon/light generated by a second portion of the active layer of the shorting mesa;
• wherein the plate is flat with a TTV (total thickness variation) of less than <5μm.

A method for fabricating semiconductor structures comprising:

• providing a substrate having a desired size and shape;
• forming a semiconductor layer structure on the substrate comprising a first semiconductor layer, a second semiconductor layer and active layer therebetween;
• forming a plurality of trenches in the semiconductor layer structure to define the semiconductor structures;
• forming a plurality of mesas comprising separated portions of the first semiconductor layer, the second semiconductor layer, and the active layer including at least one shorting mesa and at least one non-shorting mesa, the non-shorting mesa configured to apply a current to the active layer for generating photon/light in a first portion of the active layer of the non-shorting mesa, and a strapping metal layer on the shorting mesa electrically connecting the second semiconductor layer to the first semiconductor layer providing a short circuit for the current and no photon/light generated by a second portion of the active layer of the shorting mesa;
• forming an elastomeric polymer layer on a plate;
• attaching the elastomeric polymer layer to the semiconductor structures;
• and
• separating the semiconductor structures from the substrate with the semiconductor structures attached to the plate.