Optoelectronic semiconductor component

An optoelectronic semiconductor component comprising:

• a semiconductor layer sequence with a doped first layer, a doped second layer, an active zone configured to generate radiation by electroluminescence between the first layer and the second layer, and a side surface extending transversely to the active zone and delimiting the semiconductor layer sequence in a lateral direction;
• two electrodes for electrical contact between the first and second layers;
• and
• a cover layer formed in one piece and located on the side surface in a region of the first layer,
• wherein the cover layer is in direct contact with a portion of the first layer, a portion of the active zone and a portion of the second layer,
• wherein a material of the cover layer alone is configured to cause a formation of a depletion zone in the first layer,
• wherein the depletion zone comprises a lower concentration of majority charge carriers compared to a rest of the first layer,
• wherein the first layer is n-doped and the second layer is p-doped, and
• wherein a work function for electrons in the cover layer is greater than a work function for electrons in the first layer.

An optoelectronic semiconductor component comprising:

• a semiconductor layer sequence with a doped first layer, a doped second layer, an active zone configured to generate radiation by electroluminescence between the first layer and the second layer, and a side surface extending transversely to the active zone and delimiting the semiconductor layer sequence in a lateral direction;
• two electrodes for electrical contact between the first and second layers;
• and
• a cover layer formed in one piece and located on the side surface in a region of the first layer,
• wherein the cover layer is in direct contact with a portion of the first layer, a portion of the active zone and a portion of the second layer,
• wherein a material of the cover layer alone is configured to cause a formation of a depletion zone in the first layer,
• wherein the depletion zone comprises a lower concentration of majority charge carriers compared to a rest of the first layer, and
• wherein the second layer comprises a lower effective doping at the side surface than in a rest of the second layer.