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US 12,424,824 B2Granted
Vertical-cavity surface-emitting semiconductor laser diode with the mode filter
AssigneeVisual Photonics Expitaxy Co., Ltd
InventorsVan-Truoung Dai, Yu-Chung Chin, Chao-Hsing Huang, Van-Chien Nguyen
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Abstract
Provided is a vertical-cavity surface-emitting semiconductor laser diode, including a substrate and an epitaxial stack structure disposed on the substrate. The epitaxial stack structure includes an active region, a current confinement layer and a mode filter layer. The mode filter layer includes an optical aperture, and the mode filter layer is able to be oxidized. Accordingly, the optical aperture of the mode filter layer is formed by oxidizing the mode filter layer.
Claims10
A vertical-cavity surface-emitting semiconductor laser diode, comprising:
- a substrate;
- and
- an epitaxial stack structure disposed on the substrate, and comprising:
- an active region;
- an upper DBR layer disposed above the active region;
- a current confinement layer disposed below the upper DBR layer and comprising a current confinement aperture;
- and
- a mode filter layer disposed above the upper DBR layer and the current confinement layer,
- wherein the mode filter layer further comprises an optical aperture, the mode filter layer and the current confinement layer are able to be oxidized laterally, the optical aperture is formed of unoxidized material after the mode filter layer is oxidized laterally, and the current confinement aperture is formed after the current confinement layer is oxidized laterally such that in a cross section, outermost left sidewalls of the upper DBR layer, the mode filter layer, and the current confinement layer are coplanar, and outermost right sidewalls of the upper DBR layer, the mode filter layer, and the current confinement layer are coplanar;
- wherein the optical aperture of the mode filter layer is not configured to confine the current.
7 more elements
Dependencies are inferred from the claim text.