Edge-emitting semiconductor laser with high thermal conductivity and low reflection front mirror surface

An edge-emitting semiconductor laser with high thermal conductivity and low reflection front mirror surface, comprising:

• an edge-emitting semiconductor laser die 10 having a rear mirror surface 11 and a front mirror surface 12 on the lateral side, and the electromagnetic radiation generated by the edge-emitting semiconductor laser die 10 is in the wavelength range of 635 nm to 1550 nm;
• a rear mirror surface coating 20 is formed on the rear mirror surface 11;
• and
• a front mirror surface coating 30 is formed on the front mirror surface 12, and a passivation layer 31, an affinity layer 32, a high thermal conductivity layer 33 and a protective layer 34 are sequentially formed from the inside to the outside;
• wherein the material selected for the passivation layer 31 is aluminum (Al), the material selected for the affinity layer 32 is aluminum oxide (Al2O3), the material selected for the high thermal conductivity layer 33 is aluminum nitride (AlN), and the material selected for the protective layer 34 is aluminum oxide (Al2O3);
• and
• the reflectivity of the high thermal conductivity multilayer film formed by combining the affinity layer 32, the high thermal conductivity layer 33 and the protective layer 34 is less than 0.5%.