Ion beam etching chamber with etching by-product redistributor
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTe-Hsien Hsieh, Lee-Chuan Tseng
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Abstract
In some embodiments, the present disclosure relates to a method of performing an etching process. The method includes generating a plasma within a plasma chamber in communication with a processing chamber. Ions from the plasma are accelerated toward a workpiece within the processing chamber to generate an ion beam. The ion beam performs an etching process that etches a material on the workpiece. A by-product from the etching process is moved to directly below one or more baffles within the processing chamber.
Claims20
A method of performing an etching process, comprising:
- generating a plasma within a plasma chamber in communication with a processing chamber;
- accelerating ions from the plasma toward a workpiece within the processing chamber to generate an ion beam, wherein the ion beam performs an etching process that etches a material on the workpiece;
- and
- moving a by-product from the etching process to directly below one or more baffles within the processing chamber, wherein the workpiece is arranged on a workpiece reception surface that faces towards the one or more baffles.
A method of performing an etching process, comprising:
- providing ions from a plasma toward a workpiece within a processing chamber to perform an etching process that etches a material on the workpiece, wherein the processing chamber comprises a baffle arranged vertically between the workpiece and a lower surface of the processing chamber as viewed in a cross-sectional view of the processing chamber and wherein the workpiece is arranged on a workpiece reception surface that faces towards the lower surface of the processing chamber;
- and
- moving a by-product from the etching process from a first part of the lower surface that is on a first area laterally outside of a second area directly below the baffle to a second part of the lower surface that is directly below the baffle.
A method of performing an etching process, comprising:
- providing a substrate to within a processing chamber, the processing chamber comprising one or more baffles vertically between the substrate and a lower surface of the processing chamber, wherein the substrate is arranged on a workpiece reception surface of a substrate holder that is vertically above both the substrate and the one or more baffles;
- using a plasma to etch a material on the substrate, wherein a by-product of the material etched from the substrate is provided to the lower surface of the processing chamber, the lower surface of the processing chamber continuously extending from a first end of the lower surface that is directly below the one or more baffles to outside of the one or more baffles and directly below the substrate, as viewed along a cross-sectional view of the processing chamber;
- and
- transporting the by-product from a first part on the lower surface that is laterally outside of the one or more baffles to a second part of the lower surface that is directly below the one or more baffles.
Dependencies are inferred from the claim text.