Substrate processing apparatus and substrate processing method
AssigneePsk Inc.
InventorsKwang Sung Yoo, Tae Hwan Youn, Geon Jong Kim
Life of this patent
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Abstract
The present disclosure provides an apparatus for treating a substrate. The apparatus includes a chuck supporting the substrate, a gas supply unit configured to supply a process gas to an edge region of the substrate, and an edge electrode provided to surround the substrate supported by the chuck when viewed from a top and configured to generate plasma from the gas, in which the edge electrode has a ring shape and a groove recessed from an inner circumference of the edge electrode to an outer circumference of the edge electrode when viewed from the top is formed in the edge electrode.
Claims19
An apparatus for treating a substrate, the apparatus comprising:
- a housing comprising an inner space;
- a support unit supporting the substrate in the inner space;
- a gas supply unit configured to supply a gas to the inner space;
- a power source member configured to generate plasma by exciting the gas;
- and
- an upper edge electrode configured to generate the plasma in an edge region of the substrate supported by the support unit,
- wherein the support unit comprises:
- a chuck supporting the substrate;
- a lower edge electrode facing the upper edge electrode;
- an insulating ring arranged between the lower edge electrode and the chuck;
- and
- a moving member configured to move at least one of the lower edge electrode or the insulating ring in upward and downward directions between an up position and a down position,
- wherein, based on the at least one of the lower edge electrode or the insulating ring being in the up position, the inner space has a first volume,
- wherein, based on the at least one of the lower edge electrode or the insulating ring being in the down position, the inner space has a second volume, and
- wherein the second volume is greater than the first volume.
A method of treating a substrate by using a bevel etching apparatus comprising a chuck supporting the substrate, an upper edge electrode configured to generate plasma in an edge region of the substrate, a lower edge electrode facing the upper edge electrode, and an insulating ring between the chuck and the lower edge electrode, the method comprising:
- supplying a process gas to the edge region of the substrate and generating the plasma by exciting the process gas;
- generating a control signal for controlling a position of at least of the lower edge electrode or the insulating ring between an up position and a down position, an inner space of the bevel etching apparatus having a first volume based on the at least one of the lower edge electrode or the insulating ring being in the up position, the inner space having a second volume based on the at least one of the lower edge electrode or the insulating ring being in the down position, and the second volume being greater than the first volume;
- and
- adjusting at least one of a distance between the insulating ring and the upper edge electrode or a distance between the lower edge electrode and the upper edge electrode to adjust a density of the plasma per unit area.
Dependencies are inferred from the claim text.