Back to results
US 12,424,292 B2Granted
Masking techniques for memory applications
AssigneeArm Limited
InventorsEttore Amirante, Vivek Asthana, Yew Keong Chong, Jean-Christophe Vial
Life of this patent
Estimating the term…
Abstract
Various implementations described herein are related to a device including a bitcell having a bitcell layout with a first metal layer, a second metal layer and a via programming layer. The device may have a via marking layer provided in the bitcell layout for the bitcell, and the via marking layer controls optical proximity correction of the first metal layer and the second metal layer.
Claims20
A device comprising:
- a bitcell having a bitcell layout with a first metal layer, a second metal layer and a via programming layer;
- and
- a via marking layer provided in the bitcell layout for the bitcell, wherein:
- the via marking layer defines one or more possible positions of a programming via;
- and
- optical proximity correction (OPC) for the first metal layer and the second metal layer is performed based on the defined one or more possible positions.
3 more elements
A device comprising:
- a first metal layer provided in a bitcell layout for a bitcell with a first metal mask;
- a via programming layer provided in the bitcell layout for the bitcell with a single via programming mask;
- a second metal layer provided in the bitcell layout with a second metal mask;
- and
- a via marking layer provided in the bitcell layout, wherein;
- the via marking layer defines one or more possible positions of a programming via;
- and
- optical proximity correction (OPC) for the first metal layer and the second metal layer is performed based on the defined one or more possible positions.
5 more elements
A method comprising:
- providing a bitcell layout for a bitcell having a first metal layer, a second metal layer and a via programming layer;
- and
- providing a via marking layer in the bitcell layout for the bitcell,
- defining, by the via marking layer, one or more possible positions of a programming via, wherein:
- optical proximity correction (OPC) for the first metal layer and the second metal layer are performed based on the defined one or more possible positions.
2 more elements
Dependencies are inferred from the claim text.