Semiconductor device

A semiconductor structure comprising:

• an active region extending in a first direction;
• a gate electrode extending in a second direction perpendicular to the first direction, wherein the gate electrode comprises:
• a first segment over the active region;
• a gate extension extending beyond the active region, wherein the gate extension has a uniform width in the first direction, and
• a conductive element, wherein a width of the conductive element in the first direction increases as a distance from the gate extension increases along an entirety of the conductive element in the second direction.

A semiconductor structure comprising:

• an active region extending in a first direction;
• a gate electrode extending in a second direction perpendicular to the first direction, wherein the gate electrode comprises:
• a first segment over the active region;
• a first gate extension extending beyond a first edge of the active region, wherein the first gate extension has a uniform width in the first direction,
• a second gate extension extending beyond a second edge of the active region, wherein the first edge is opposite the second edge, and the second gate extension has a uniform width in the first direction, and
• a conductive element, wherein a width of the conductive element in the first direction increases as a distance from the first gate extension increases along an entirety of the conductive element in the second direction.