Semiconductor processing tool and methods of operation

A method, comprising:

• receiving a semiconductor substrate coated with a photoresist material;
• and
• exposing the semiconductor substrate to light generated by a plasma in an extreme ultraviolet (EUV) radiation source, wherein generating the plasma comprises:
• splitting at least one of a pre-pulse laser beam or a main-pulse laser beam into a first portion and a second portion;
• generating, based on the first portion, a primary laser beam having a first spatial energy-distribution profile;
• generating, based on the second portion, an auxiliary laser beam having a second spatial energy-distribution profile;
• and
• providing, to the EUV radiation source, the primary laser beam and the auxiliary laser beam to generate a deformed droplet from a droplet of a target material in a vessel of the EUV radiation source.

A method, comprising:

• providing, to a primary laser source associated with an extreme ultraviolet (EUV) radiation source, a first signal to cause the primary laser source to generate a first plurality of laser beams to generate a plasma from a first droplet of a target material;
• and
• providing, to an auxiliary laser source associated with the EUV radiation source, a second signal to cause the auxiliary laser source to generate a second plurality of laser beams to generate the plasma from a second droplet of the target material,
• wherein at least one of:
• a third signal is provided to the primary laser source to deactivate the primary laser source after the first plurality of laser beams are generated,
• a fourth signal is provided to the auxiliary laser source after the second plurality of laser beams are generated, or
• the second signal is to cause the auxiliary laser source to generate the second plurality of laser beams at least one of:
• concurrently with the primary laser source generating a subset of the first plurality of laser beams, or
• after the primary laser source finishes generating the first plurality of laser beams.