Techniques and device structures based upon directional dielectric deposition and bottom-up fill

A method of forming a semiconductor device, comprising:

• providing a plurality of device structures extending vertically from a base, each of the plurality of device structures including a first sidewall opposite a second sidewall;
• providing a seed layer over the first sidewall and the second sidewall;
• and
• forming a dielectric layer atop the seed layer, wherein the dielectric layer is formed along just a top surface of each of the plurality of device structures and along an upper portion of the first and second sidewalls using an angled dielectric material deposition delivered to the plurality of device structures at a non-zero angle of inclination relative to a perpendicular extending from an upper surface of the base.

A method, comprising:

• providing a semiconductor device including a plurality of device structures each including a first sidewall opposite a second sidewall;
• providing a seed layer over the first and second sidewall;
• and
• forming a dielectric layer atop the seed layer, wherein the dielectric layer is formed along just a top surface of each of the plurality of device structures and along an upper portion of the first and second sidewalls using an angled deposition delivered to the plurality of device structures at a non-zero angle of inclination relative to a perpendicular extending from the semiconductor device.