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US 12,421,104 B2Granted
Barrier structure within a microelectronic enclosure
AssigneeTexas Instruments Incorporated
InventorsJennifer Lynne Holm, Simon Joshua Jacobs, Mary Alyssa Drummond Roby, Kathryn Anne Schuck, Kelly Jay Taylor
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Abstract
A device includes a first substrate. The device also includes a barrier structure including a metallic layer on the first substrate, where the barrier structure forms a cavity. The device also includes a second substrate on the metallic layer, where the metallic layer extends between the first substrate and the second substrate, and where the metallic layer includes a sloped edge that contacts the first substrate within the cavity.
Claims20
A device, comprising:
- a first substrate;
- a barrier structure including a metallic layer on the first substrate, wherein the barrier structure forms a cavity;
- and
- a second substrate on the metallic layer, wherein the metallic layer extends between the first substrate and the second substrate, and wherein the metallic layer includes a sloped edge that contacts the first substrate within the cavity.
1 more element
A device, comprising:
- a semiconductor device on a first substrate;
- a seed metal on the first substrate;
- a metal line on the seed metal;
- one or more metal layers stacked above the metal line, wherein a second substrate is positioned above at least one of the one or more metal layers, the second substrate covers the semiconductor device;
- and
- a barrier structure including the metal line, wherein the barrier structure extends between the first substrate and the second substrate to form a cavity in which the semiconductor device is positioned, and wherein the barrier structure includes a sloped edge, the first substrate contacting one end of the sloped edge.
3 more elements
A device, comprising:
- a first substrate;
- a barrier structure including a metallic layer on the first substrate, wherein the barrier structure forms a cavity;
- and
- a second substrate over the metallic layer, wherein the metallic layer extends from the first substrate towards the second substrate, and wherein the metallic layer includes a sloped edge, a gap between the metallic layer and the second substrate.
1 more element
Dependencies are inferred from the claim text.