Hole-transport layer material, electron-blocking layer material, electron-transport layer material, hole-blocking layer material, light-emitting device, light-emitting apparatus, electronic device, and lighting device

A light-emitting device comprising:

• an anode;
• a cathode;
• and
• an EL layer between the anode and the cathode,
• wherein the EL layer comprises a hole-transport layer and a light-emitting layer,
• wherein the hole-transport layer is positioned between the anode and the light-emitting layer,
• wherein the hole-transport layer is not in contact with the anode,
• wherein the hole-transport layer comprises a hole transport layer material, and
• wherein a GSP_slope that is a potential gradient of a surface potential of an evaporated film of the hole transport layer material is higher than or equal to 20 mV/nm.

A light-emitting device comprising:

• an anode;
• a cathode;
• and
• an EL layer between the anode and the cathode,
• wherein the EL layer comprises a hole-injection layer, a hole-transport layer, an electron-blocking layer, and a light-emitting layer,
• wherein the hole-injection layer, the hole-transport layer, and the electron-blocking layer are positioned between the anode and the light-emitting layer,
• wherein the electron-blocking layer is in contact with the light-emitting layer,
• wherein the hole-injection layer is in contact with the anode,
• wherein the hole-transport layer comprises a hole transport layer material,
• wherein the electron-blocking layer comprises an electron blocking layer material, and
• wherein a GSP_slope of an evaporated film of the hole transport layer material is lower than a GSP slope of an evaporated film of the electron blocking layer material.