Solid-state imaging device

A solid-state imaging device including a pixel array of a plurality of unit pixels,

• each of the plurality of unit pixels including a photoelectric conversion element that generates a signal charge by photoelectric conversion, and an active element that converts the signal charge into an electric signal and outputs the electric signal, the solid-state imaging device comprising:
• an N-type semiconductor layer;
• an element layer stacked on the semiconductor layer and including the photoelectric conversion element and the active element;
• an interconnect layer stacked on the element layer and providing an interconnect for the active element;
• and
• an element isolation trench penetrating the semiconductor layer, wherein
• the element layer includes a P-type region and an N-type region,
• a first hole storage layer is formed on a surface of the semiconductor layer on a side opposite to the element layer,
• a second hole storage layer is formed in contact portions of the semiconductor layer and the element layer with the element isolation trench,
• the P-type region of the element layer and the first hole storage layer are connected to each other by the second hole storage layer,
• the solid-state imaging device is configured as a semiconductor chip,
• the element isolation trench includes, at a peripheral edge of the semiconductor chip, a near-edge element isolation trench that is continuous along an outer peripheral end, and
• the near-edge element isolation trench has a polygonal shape with an obtuse angle in a plan view.