Semiconductor structure with an air gap, method for forming same, and stacked structure
AssigneeChangxin Memory Technologies, Inc.
InventorLuguang Wang
Life of this patent
Estimating the term…
Abstract
A semiconductor structure includes: a base, including a substrate and a dielectric layer, the substrate being provided with a first front surface and a first back surface which are opposite, and the dielectric layer being located at the first front surface; a connecting hole, penetrating through the substrate and extending into the dielectric layer; a first insulating layer, located at the surface of an inner wall of the connecting hole; a protective barrier layer, located at the surface of the first insulating layer and grounded; a second insulating layer, located at the surface of the protective barrier layer; and a connecting structure, located at the surface of the second insulating layer and filling up the connecting hole.
Claims18
A semiconductor structure, comprising:
- a base, comprising a substrate and a dielectric layer, the substrate being provided with a first front surface and a first back surface which are opposite, and the dielectric layer being located at the first front surface;
- a connecting hole, penetrating through the substrate and extending into the dielectric layer;
- a first insulating layer, located at a surface of an inner wall of the connecting hole;
- a protective barrier layer, located at a surface of the first insulating layer and grounded;
- a second insulating layer, located at a surface of the protective barrier layer, the second insulating layer comprises a first sub insulating layer and a second sub insulating layer spaced apart from each other;
- and
- a connecting structure, located at a surface of the second insulating layer and filling up the connecting hole;
- and
- wherein the protective barrier layer, the first sub insulating layer, the connecting structure and the second sub insulating layer are arranged in a surrounding manner to form an air gap.
A method for forming a semiconductor structure, comprising:
- providing a base, wherein the base comprises a substrate and a dielectric base layer, the substrate is provided with a first front surface and a first back surface which are opposite, the dielectric base layer is located at the first front surface, a connecting hole is formed in the base, and the connecting hole penetrates through the substrate and extends into the dielectric base layer;
- and
- forming a first insulating layer, a protective barrier layer, a second insulating layer and a connecting structure in the connecting hole, wherein the first insulating layer is located at a surface of an inner wall of the connecting hole, the protective barrier layer is located at a surface of the first insulating layer, the second insulating layer is located at a surface of the protective barrier layer, and the connecting structure is located at a surface of the second insulating layer and filled in the connecting hole, wherein the second insulating layer comprises a first sub insulating layer and a second sub insulating layer spaced apart from each other;
- wherein part of the dielectric base layer is removed, so that the protective barrier layer is grounded, and the dielectric base layer that is retained constitutes a dielectric layer, and the protective barrier layer, the first sub insulating layer, the connecting structure and the second sub insulating layer are arranged in a surrounding manner to form an air gap.
Dependencies are inferred from the claim text.