Neutron detection element

A neutron detection element comprising:

• a neutron detector configured to detect a neutron and convert the neutron into an electrical signal;
• and
• an amplifier configured to amplify an output of the neutron detector,
• the neutron detector including:
• a semiconductor layer of a first conductivity type;
• a detector diffusion layer of a second conductivity type in the semiconductor layer;
• a neutron conversion layer on the detector diffusion layer, the neutron conversion layer being configured to convert a neutron into an x-ray;
• and a potential stabilizing region of the first conductivity type in the semiconductor layer, the potential stabilizing region having a higher impurity concentration than the semiconductor layer,
• the amplifier including a plurality of transistors in the semiconductor layer,
• the neutron conversion layer being a metal film including a conversion functional layer containing boron 10 or a layer containing lithium 6,
• wherein the semiconductor layer is a silicon carbide semiconductor layer.