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US 12,416,691 B2Granted
Magnetic sensor device
AssigneeMelexis Technologies SA
InventorsYves Bidaux, Lionel Tombez
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Abstract
An integrated sensor device includes: a semiconductor substrate comprising a horizontal Hall element, and an integrated magnetic flux concentrator located substantially above said horizontal Hall element, wherein the first magnetic flux concentrator has a shape with a geometric center which is aligned with a geometric centre of the horizontal Hall element; and wherein the shape has a height H and a transversal dimension D, wherein H≥30 μm and/or wherein (H/D)≥25%. The integrated magnetic flux concentrator may be partially incorporated in the “interconnection stack”. A method is provided for producing such an integrated sensor device.
Claims20
An integrated sensor device comprising:
- a semiconductor substrate comprising a first horizontal Hall element, and a first integrated magnetic flux concentrator located above said first horizontal Hall element;
- wherein the first magnetic flux concentrator has a shape with a geometric center which is aligned with a geometric centre of the horizontal Hall element;
- wherein the integrated sensor device further comprises a second horizontal Hall element and a second integrated magnetic flux concentrator located above said second horizontal Hall element;
- wherein the second magnetic flux concentrator has a second shape with a geometric center which is aligned with a geometric centre of the second horizontal Hall element in a direction perpendicular to the semiconductor substrate;
- wherein the second horizontal Hall element is spaced from the first horizontal Hall element in a first direction X parallel to the semiconductor substrate;
- and wherein the integrated sensor device is further configured for determining a difference signal or a gradient signal dBz/dx.
3 more elements
An integrated sensor device comprising:
- a semiconductor substrate comprising a first horizontal Hall element, and a first integrated magnetic flux concentrator located above said first horizontal Hall element;
- wherein the first magnetic flux concentrator has a shape with a geometric center which is aligned with a geometric centre of the horizontal Hall element;
- wherein the integrated sensor device further comprises a second horizontal Hall element and a second integrated magnetic flux concentrator located above said second horizontal Hall element;
- wherein the second magnetic flux concentrator has a second shape with a geometric center which is aligned with a geometric centre of the second horizontal Hall element in a direction perpendicular to the semiconductor substrate;
- wherein the second horizontal Hall element is spaced from the first horizontal Hall element in a first direction X parallel to the semiconductor substrate;
- wherein the integrated sensor device is further configured for determining a difference signal or a gradient signal dBz/dx;
- wherein the semiconductor substrate comprises an interconnection stack comprising at least four metal layers separated by a plurality of insulation layers;
- and wherein at least a portion of the integrated magnetic flux concentrator is situated inside the interconnection stack.
5 more elements
An integrated sensor device comprising:
- a semiconductor substrate comprising a first horizontal Hall element, and a first integrated magnetic flux concentrator located above said first horizontal Hall element;
- wherein the first magnetic flux concentrator has a shape with a geometric center which is aligned with a geometric centre of the horizontal Hall element;
- wherein the integrated sensor device further comprises a second horizontal Hall element and a second integrated magnetic flux concentrator located above said second horizontal Hall element;
- wherein the second magnetic flux concentrator has a second shape with a geometric center which is aligned with a geometric centre of the second horizontal Hall element in a direction perpendicular to the semiconductor substrate;
- wherein the second horizontal Hall element is spaced from the first horizontal Hall element in a first direction X parallel to the semiconductor substrate;
- wherein the integrated sensor device is further configured for determining a difference signal or a gradient signal dBz/dx;
- wherein the semiconductor substrate has an active surface comprising said horizontal Hall element, and a passive surface;
- and
- wherein the integrated magnetic flux concentrator is located on a side of the active surface or wherein the integrated magnetic flux concentrator is located on a side of the passive surface.
6 more elements
Dependencies are inferred from the claim text.