Methods and devices for growing oxide crystals in oxygen atmosphere
AssigneeMeishan Boya Advanced Materials Co., Ltd.
InventorsYu Wang, Weiming Guan, Min Li
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Abstract
The present disclosure discloses a method for growing a crystal in oxygen atmosphere. The method may include compensating a weight of a reactant, introducing a flowing gas, improving a volume ratio of oxygen during a cooling process, providing a heater in a temperature field, and optimizing parameters. According to the method, problems may be solved, for example, cracking and component deviation of the crystal during a crystal growth process, and without oxygen-free vacancy. The method for growing the crystal may have excellent repeatability and crystal performance consistency.
Claims14
A crystal, a formula of the crystal being (A1-bBb)3(P1-qQq)5O12, wherein:
- A consists of at least one of Gd, Lu, La, Yb, Sc, or Y;
- B consists of at least one of Na, K, V, Mn, Fe, Co, Ni, Ti, Ge, Zr, or Hf;
- P consists of at least one of Al, Ga, In, or Sc;
- Q consists of Al;
- b=0.2˜0.9;
- and
- q=0˜1.
A method for growing a crystal, wherein:
- a formula of the crystal is (A1-bBb)3(P1-qQq)5O12, wherein:
- A consists of at least one of Gd, Lu, La, Yb, Sc, or Y;
- B consists of at least one of Na, K, Zn, V, Mn, Fe, Co, Ni, Ti, Ge, Zr, or Hf;
- P consists of at least one of Al, Ga, In, or Sc;
- Q consists of Al;
- b=0.2˜0.9;
- and
- q=0˜1;
- and
- the method comprises:
- weighing reactants based on a molar ratio of the reactants according to a reaction equation for generating the crystal;
- placing the reactants into a crystal growth device;
- introducing a flowing gas into the crystal growth device after sealing the crystal growth device;
- and
- operating the crystal growth device to execute a crystal growth operation based on Czochralski technique.
Dependencies are inferred from the claim text.