Manifolds for uniform vapor deposition
AssigneeASM IP Holding B.V.
InventorsDavid Marquardt, Andrew Michael Yednak, III, Eric James Shero, Herbert Terhorst
Life of this patent
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Abstract
A semiconductor device comprising a manifold for uniform vapor deposition is disclosed. The semiconductor device can include a manifold comprising a bore and having an inner wall. The inner wall can at least partially define the bore. A first axial portion of the bore can extend along a longitudinal axis of the manifold. A supply channel can provide fluid communication between a gas source and the bore. The supply channel can comprise a slit defining an at least partially annular gap through the inner wall of the manifold to deliver a gas from the gas source to the bore. The at least partially annular gap can be revolved about the longitudinal axis.
Claims20
A semiconductor processing device, comprising:
- a manifold comprising a bore and having an inner wall, the inner wall at least partially defining the bore, a first axial portion of the bore extending along a longitudinal axis of the manifold;
- and
- a supply channel that provides fluid communication between a gas source and the bore, the supply channel comprising a slit defining an at least partially annular gap through the inner wall of the manifold to deliver a gas from the gas source to the bore, the at least partially annular gap revolved about the longitudinal axis,
- wherein the at least partially annular gap is revolved about the longitudinal axis in a range of 90° to 360.
A semiconductor processing device, comprising:
- a manifold comprising a bore;
- and
- a supply channel that provides fluid communication between a gas source and the bore to supply a gas to the bore,
- wherein the bore comprises a channel having an annular flow portion with an at least partially annular cross-section and a non-annular flow portion with a non-annular cross-section, the non-annular flow portion disposed downstream of the annular flow portion,
- wherein the manifold comprises a plurality of blocks connected together to define the bore and the supply channel,
- wherein the annular flow portion comprises a plug disposed in the bore, the annular flow portion disposed between an outer periphery of the plug and an inner wall of the manifold, and
- wherein the annular flow portion comprises a first block of the plurality of blocks, the first block comprising an opening through which the plug is disposed and one or more holes disposed adjacent the opening.
A semiconductor processing device, comprising:
- a manifold comprising a bore;
- a supply channel that provides fluid communication between a gas source and the bore to supply a gas to the bore, the supply channel comprising a slit defining an at least partially annular gap through the inner wall of the manifold to deliver a gas from the gas source to the bore, the at least partially annular gap revolved about the longitudinal axis;
- and
- a plug disposed within the bore,
- wherein the bore comprises a channel having an annular flow portion with an at least partially annular cross-section and a non-annular flow portion with a non-annular cross-section, the non-annular flow portion disposed downstream of the annular flow portion.
Dependencies are inferred from the claim text.