High purity ingot for wafer production
AssigneeFree Form Fibers, LLC
InventorsShay L. Harrison, John L. Schneiter, Joseph Pegna, Ram K. Goduguchinta, Kirk L. Williams, Erik G. Vaaler
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Abstract
A method of forming a high purity ingot for wafer production, such as a silicon carbidewafer. Precursors are added to a reactor; at least part of a fiber is formed in the reactor from the precursors using chemical deposition interacting with the precursors; and granular material is then formed from the fiber. The method further includes forming the ingot from the granular material. In one aspect, the chemical deposition can include laser induced chemical vapor deposition. Further, the method can include separating one or more wafers from the ingot for use in semiconductor fabrication.
Claims14
A method of forming a high purity ingot, comprising:
- providing precursors in a reactor;
- forming a stoichiometric SiC fiber in the reactor from the precursors, including using laser-induced chemical vapor deposition interacting with said precursors, the stoichiometric SiC fiber being a friable fiber;
- forming a granular material from the fiber;
- and
- forming the ingot from the granular material.
A method of forming a wafer, comprising:
- providing precursors in a reactor;
- forming a stoichiometric SiC fiber in the reactor from the precursors, including using laser-induced chemical vapor deposition interacting with said precursors, the stoichiometric SiC fiber being a friable fiber;
- forming a granular material from the fiber;
- forming an ingot from the granular material;
- and
- separating the wafer from the ingot.
Dependencies are inferred from the claim text.