Semiconductor device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorYuta Endo
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Abstract
A semiconductor device with high aperture ratio is provided. The semiconductor device includes a transistor and a capacitor having a pair of electrodes. An oxide semiconductor layer formed over the same insulating surface is used for a channel formation region of the transistor and one of the electrodes of the capacitor. The other electrode of the capacitor is a transparent conductive film. One electrode of the capacitor is electrically connected to a wiring formed over the insulating surface over which a source electrode or a drain electrode of the transistor is provided, and the other electrode of the capacitor is electrically connected to one of the source electrode and the drain electrode of the transistor.
Claims14
A semiconductor device comprising:
- a transistor comprising:
- a first oxide semiconductor layer;
- a source electrode layer and a drain electrode layer;
- a first insulating film over the first oxide semiconductor layer;
- and
- a gate electrode layer over the first insulating film;
- a capacitor comprising:
- one electrode included in a second oxide semiconductor layer;
- a dielectric over the second oxide semiconductor layer;
- and
- the other electrode included in a transparent conductive film over the dielectric;
- a display element comprising:
- one electrode included in the transparent conductive film;
- and
- the other electrode included in a pixel electrode over the transparent conductive film;
- a second insulating film;
- and
- a wiring being in contact with the second oxide semiconductor layer,
- wherein the other electrode of the capacitor is electrically connected to the one electrode of the display element,
- wherein each of the wiring and the second oxide semiconductor layer is over and in contact with the second insulating film,
- wherein each of the source electrode layer, the drain electrode layer and the wiring comprises a second material, and
- wherein each material of the first oxide semiconductor layer and the second oxide semiconductor layer comprises In, Zn and O.
Dependencies are inferred from the claim text.