Method of fabricating a semiconductor structure
AssigneeDiodes Incorporated
InventorsTao Long, Pin-Hao Huang, Ze Rui Chen
Life of this patent
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Abstract
A method of manufacturing a semiconductor structure forming a first diffusion layer on a first electrode layer and forming a core layer over the first diffusion layer. A second diffusion layer is formed over the core layer. A plurality of diffusion regions are formed in the second diffusion layer. A second electrode layer is formed over the second diffusion layer and in contact with the plurality of diffusion regions. The second diffusion layer is coupled to the plurality of diffusion regions through the second electrode layer. The substrate is sandwiched between the first electrode layer and the second electrode layer.
Claims4
A method of manufacturing a semiconductor structure, comprising:
- providing a substrate having a first conductivity type, and having a first surface and a second surface opposite to the first surface;
- diffusing from the first surface of the substrate into the substrate to form a first diffusion layer having the first conductivity type;
- diffusing from the second surface of the substrate into the substrate to form a second diffusion layer having a second conductivity type;
- forming a plurality of diffusion regions having the first conductivity type in the second diffusion layer, wherein a first conductivity type impurity concentration of the plurality of diffusion regions is higher than a second conductivity type impurity concentration of the second diffusion layer;
- forming a first electrode layer on the first diffusion layer;
- forming a second electrode layer on the second diffusion layer, wherein the second electrode layer is in contact with the plurality of diffusion regions;
- and
- coupling the second diffusion layer to the plurality of diffusion regions through the second electrode layer, wherein, the substrate is between the first electrode layer and the second electrode layer.
A method of manufacturing a semiconductor structure, comprising:
- forming a first diffusion layer on a first electrode layer;
- forming a core layer over the first diffusion layer;
- forming a second diffusion layer over the core layer;
- forming a plurality of diffusion regions in the second diffusion layer;
- forming a second electrode layer over the second diffusion layer and in contact with the plurality of diffusion regions;
- forming a square groove ring extending from the second electrode layer down to a diffusion boundary of the first diffusion layer;
- forming a glass layer over the square groove ring;
- and
- forming a polysilicon layer between the glass layer and the square groove ring.
Dependencies are inferred from the claim text.