Resonant tunneling diodes and manufacturing methods thereof
AssigneeEnkris Semiconductor, Inc.
InventorsKai Cheng, Kai Liu
Life of this patent
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Abstract
The present disclosure provides a resonant tunneling diode including: a first barrier layer; a second barrier layer; a potential well layer between the first barrier layer and the second barrier layer, materials of the first barrier layer, the second barrier layer, and the potential well layer including a group III nitride, a material of the potential well layer including a gallium element; a first barrier layer between the first barrier layer and the potential well layer; and/or a second barrier layer between the second barrier layer and the potential well layer.
Claims10
A resonant tunneling diode, comprising:
- a first barrier layer;
- a second barrier layer;
- a potential well layer between the first barrier layer and the second barrier layer;
- a collector electrode;
- an emitter electrode, the collector electrode close to the first barrier layer, the emitter electrode close to the second barrier layer;
- a third isolation layer entirely between the collector electrode and the first barrier layer;
- wherein a material of the first barrier layer, a material of the second barrier layer, and a material of the potential well layer all comprise a group III nitride, a material of the third isolation layer comprises AlN, and the material of the potential well layer comprises a gallium element;
- and
- a first isolation layer between the first barrier layer and the potential well layer.
A resonant tunneling diode, comprising:
- a first barrier layer;
- a second barrier layer;
- a potential well layer between the first barrier layer and the second barrier layer;
- a collector electrode;
- an emitter electrode, the collector electrode close to the first barrier layer, the emitter electrode close to the second barrier layer;
- a fourth isolation layer entirely between the emitter electrode and the second barrier layer;
- wherein a material of the first barrier layer, a material of the second barrier layer, and a material of the potential well layer all comprise a group III nitride, a material of the fourth isolation layer comprises AlN, and the material of the potential well layer comprises a gallium element;
- and
- a first isolation layer between the first barrier layer and the potential well layer.
Dependencies are inferred from the claim text.