Compartment shielding with metal frame and cap

A method of making a semiconductor device, comprising:

• providing a substrate;
• disposing a first semiconductor die and second semiconductor die over a first surface of the substrate;
• disposing a first discrete component on the first surface of the substrate adjacent to the first semiconductor die;
• disposing a second discrete component on the first surface of the substrate adjacent to the second semiconductor die;
• disposing a first frame over the first surface of the substrate around the semiconductor die, wherein the first frame includes an opening and a flap formed at an edge of the opening, and wherein the flap includes a castellated edge, and wherein the flap is disposed with the first discrete component and first semiconductor die on a first side of the flap and the second discrete component and second semiconductor die on a second side of the flap;
• disposing a first lid over the first frame, wherein a sidewall of the first lid includes an elastic characteristic to latch onto the first frame;
• disposing a third semiconductor die over a second surface of the substrate opposite the first surface, wherein the first semiconductor die, second semiconductor die, and third semiconductor die are identical semiconductor die singulated from a common semiconductor wafer;
• disposing a third discrete component on the second surface of the substrate adjacent to the third semiconductor die;
• disposing a second frame over the second surface of the substrate, wherein the second frame includes an internal flap to compartmentalize shielding provided by the second frame;
• disposing a second lid over the second frame, wherein a sidewall of the second lid includes an elastic characteristic to latch onto the second frame;
• and
• disposing a solder bump over the second surface of the substrate, wherein the solder bump is a continuous body of solder that extends from the substrate to a height over the second surface of the substrate that is greater than a height of the second frame and second lid over the second surface of the substrate.

A semiconductor device, comprising:

• a substrate;
• a first semiconductor die disposed over the substrate, wherein the first semiconductor die is a bare die as singulated from a semiconductor wafer with base semiconductor material exposed at a back surface and a plurality of side surfaces of the first semiconductor die without encapsulant deposited over the first semiconductor die;
• a metal frame disposed over the substrate around the first semiconductor die, wherein the metal frame includes,
• a first opening,
• a first flap formed at an edge of the first opening, wherein the first opening includes a first divot directly adjacent to a first side of the first flap and a second divot directly adjacent to a second side of the first flap, and wherein the first flap includes a castellated edge,
• a second opening,
• a second flap formed at an edge of the second opening, wherein the second flap includes a castellated edge, and
• a linear portion that extends for an entire length or width of the first metal frame between the first opening and second opening, wherein the first flap and second flap both extend in parallel with the linear portion and include respective long sides physically contacting the linear portion for an entire length of the respective first flap or second flap, and wherein the first divot and second divot extend into the linear portion;
• and
• a metal lid disposed over the metal frame, wherein a sidewall of the metal lid includes an elastic characteristic to latch onto the metal frame.

A semiconductor device, comprising:

• a substrate;
• a first semiconductor die disposed over a first surface of the substrate;
• a second semiconductor die disposed over the first surface of the substrate;
• a first discrete component disposed on the first surface of the substrate adjacent to the first semiconductor die;
• a second discrete component disposed on the first surface of the substrate adjacent to the second semiconductor die;
• a first frame disposed over the first surface of the substrate around the semiconductor die, wherein the first frame includes a flap folded down with the first discrete component and first semiconductor die on a first side of the flap and the second discrete component and second semiconductor die on a second side of the flap, and wherein the flap includes a castellated edge;
• a first lid disposed over the first frame, wherein a sidewall of the first lid includes an elastic characteristic to latch onto the first frame;
• a third semiconductor die disposed over a second surface of the substrate opposite the first surface;
• a third discrete component disposed on the second surface of the substrate adjacent to the third semiconductor die;
• a second frame disposed over the second surface of the substrate around the third semiconductor die and third discrete component, wherein the second frame includes an internal flap to compartmentalize shielding provided by the second frame;
• a second lid disposed over the second frame, wherein a sidewall of the second lid includes an elastic characteristic to latch onto the second frame;
• and
• a solder bump directly attached to the second surface of the substrate, wherein a height of the solder bump over the second surface is greater than a height of the second frame and second lid.