Method of fabricating a hollow wall for controlling directional deposition of material

A method of fabricating a device, which method comprises:

• fabricating a hollow wall by the steps of:
• forming a layer of a resist on a substrate,
• removing a portion of the resist selectively to form a channel in the resist,
• forming a layer of an amorphous dielectric material in the channel in the resist, wherein the amorphous dielectric material is silicon oxide or silicon nitride, and
• removing the resist and portions of the amorphous dielectric material situated on the resist to form the hollow wall, wherein the hollow wall has a generally rectangular shape comprising a front surface, a rear surface opposite the front surface, and a pair of side surfaces and wherein the generally rectangular shape includes a chamfered corner between the front surface and one of the pair of side surfaces, the chamfered corner having an internal angle to the respective side surface;
• and
• depositing a material selectively over the substrate having the hollow wall using a beam,
• wherein the beam is directed towards the substrate in a direction selected such that the hollow wall prevents deposition of the material in a shadow region created by the hollow wall.