Accessing memory cells in a vertical memory array

A method for accessing a 3D vertical memory array comprising:

• selecting multiple word lines;
• selecting multiple bit lines, wherein selecting the multiple bit lines comprises:
• selecting alternate bit lines in the 3D vertical memory array,
• selecting a subset of a set of bit lines in the 3D vertical memory array, or
• selecting the multiple bit lines in the 3D vertical memory array based on a datum;
• and
• simultaneously accessing multiple memory cells, with each memory cell at a crossing of a selected word line of the selected multiple word lines and a selected bit line of the selected multiple bit lines to be programmed.

A memory apparatus, comprising:

• a 3D vertical memory array comprising word lines organized in word line planes separated from each other by insulating material;
• bit lines perpendicular to the word line planes;
• a portion of a word line plate coupled to multiple word lines on a word line plane, wherein the portion of the word line plate has a width greater than a width of each of the word lines of the multiple word lines;
• memory cells coupled between a respective word line and a respective bit line;
• and
• one or more controllers configured to:
• select the multiple word lines;
• select multiple bit lines;
• and
• simultaneously access multiple memory cells, with each memory cell at a crossing of a selected word line and a selected bit line.

A memory apparatus, comprising:

• a 3D vertical memory array comprising word lines organized in word line planes separated from each other by insulating material;
• bit lines perpendicular to the word line planes;
• memory cells coupled between a respective word line and a respective bit line;
• and
• one or more controllers configured to:
• select multiple word lines;
• select multiple bit lines, wherein, to select the multiple bit lines, the one or more controllers are configured to:
• select alternate bit lines in the 3D vertical memory array,
• select a subset of the bit lines in the 3D vertical memory array, or
• select the multiple bit lines in the 3D vertical memory array based on a datum to be programmed;
• and
• simultaneously access multiple memory cells, with each memory cell at a crossing of a selected word line and a selected bit line.