Flow control system, method, and apparatus

A method of manufacturing a semiconductor device, the method comprising:

• a) supplying a gas to a gas inlet of a gas flow control apparatus;
• b) generating, with a controller, a gas flow activation signal at a first time that comprises data identifying a second time at which the gas is to be delivered from a gas outlet of a gas flow path of the gas flow control apparatus at a predetermined flow rate, the first time being prior to the second time and a priming period being defined between the first and second times;
• c) upon receipt of the gas flow activation signal, the controller adjusting one or more components of the gas flow control apparatus to achieve a primed condition of the gas in a volume of the gas flow path during the priming period, the primed condition selected to achieve the predetermined flow rate, the gas being prohibited from exiting the gas outlet of the gas flow path during the priming period;
• and
• d) delivering the gas from the volume at the second time via the gas outlet of the gas flow path to a semiconductor manufacturing process.

A method of manufacturing a semiconductor device, the method comprising:

• a) supplying a gas to a gas inlet of a gas flow control apparatus;
• b) priming, in a volume of a gas flow path and during a priming period, the gas to a primed condition, the primed condition selected to achieve the predetermined flow rate, the gas being prohibited from exiting a gas outlet of the gas flow path during the priming period;
• and
• c) delivering the gas from the volume of the gas flow control apparatus to a semiconductor manufacturing process subsequent to the priming period.