Ultrathin film shadow mask for lithography and lithography method using the same

Abstract

Provided are a new ultrathin film silicon shadow mask which is flexible, is reusable, and can be precisely aligned and manipulated through transfer printing, and a lithography method using the same. A thin thickness of a silicon shadow mask may intrinsically form a pattern having an enhanced resolution in a plane and a non-planar surface. Further, the silicon shadow mask may be formed on a substrate by metal deposition in addition to etching in a multi-layer configuration by a transfer printing technology based alignment method. Through such a method, a material in which patterning is impossible may be patterned through photolithography.

Dependencies are inferred from the claim text.