Integrated low k recovery and ALD metal deposition process for advanced technology node

A method, comprising:

• positioning a substrate within a processing chamber, the substrate comprising a first low-k film having a first water contact angle, the first low-k film disposed over an interconnect structure;
• cleaning the substrate within the processing chamber to form a cleaned substrate, the cleaned substrate comprising a damaged low-k film having a second water contact angle and the damaged low-k film is a product of the first low-k film;
• exposing the cleaned substrate to a UV light source to form a treated substrate, the treated substrate comprising a treated low-k film having a third water contact angle and the treated low-k film is a product of the damaged low-k film;
• exposing the treated substrate to a recovery precursor to form a recovered substrate, the recovered substrate comprising a recovered low-k film and the recovered low-k film is a product of the treated low-k film, wherein each of the first low-k film and the recovered low-k film independently comprise a k value, the k value of the first low-k film being less than the k value of the recovered low-k film;
• and
• depositing a liner layer over the recovered substrate via atomic layer deposition (ALD).

A method, comprising:

• positioning a substrate within a processing chamber, the substrate comprising a first low-k film having a first water contact angle, the first low-k film disposed over an interconnect structure;
• cleaning the substrate within the processing chamber to form a cleaned substrate, the cleaned substrate comprising a damaged low-k film having a second water contact angle and the damaged low-k film is a product of the first low-k film;
• exposing the cleaned substrate to a recovery precursor to form a recovered substrate, the recovered substrate comprising a recovered low-k film and the recovered low-k film is a product of the damaged low-k film;
• exposing the recovered substrate to a UV light source to form a treated substrate, the treated substrate comprising a treated low-k film having a third water contact angle and the treated low-k film is a product of the recovered low-k film, wherein each of the first low-k film and the treated low-k film independently comprise a k value and the k value of the first low-k film is less than the k value of the treated low-k film;
• and
• depositing a liner layer over the treated substrate via atomic layer deposition (ALD),
• wherein the first water contact angle is greater than the second water contact angle, and the second water contact angle is less than the third water contact angle.