Container for efficient vaporization of precursor materials and method of using the same
AssigneeASM IP Holding B.V.
InventorAntti Niskanen
Life of this patent
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Abstract
A precursor vessel for a vapor deposition process is disclosed. The vessel includes a housing having an inlet, an outlet, and defining an interior volume. A tube is disposed within the interior volume and extends from the inlet to the outlet. The tube has sidewalls defining a flowpath there through. The sidewalls have an internal surface facing the flowpath having a plurality of depressions in the internal surface having a depth and a width. A solid precursor material may be loaded into the depressions. A system including the precursor vessel and a vapor deposition process are further disclosed herein.
Claims21
A vapor deposition system comprising:
- a precursor vessel comprising:
- a housing having an inlet for receiving a carrier gas, an outlet, and defining an interior volume;
- and
- a tube disposed within the interior volume and extending from the inlet to the outlet, the tube comprising sidewalls defining a flowpath there through;
- wherein the sidewalls comprise an internal surface facing the flowpath having a plurality of depressions in the internal surface having a depth and a width,
- wherein the plurality of depressions comprise at least four depressions evenly distributed along a length of the tube, and
- wherein a precursor material is disposed within the plurality of depressions.
A vapor deposition system comprising:
- a source of a carrier gas;
- a reaction chamber for holding a substrate therein;
- and
- a precursor vessel comprising:
- a housing having an inlet in fluid communication with the source of carrier gas, an outlet in fluid communication with the reaction chamber, and defining an interior volume;
- and
- a tube disposed within the interior volume and extending from the inlet to the outlet, the tube comprising sidewalls defining a flowpath there through which a carrier gas from the carrier gas source flows and includes a quantity of a precursor material therein,
- wherein the sidewalls comprise an internal surface facing the flowpath having a plurality of depressions in the internal surface having a width and a depth,
- wherein the plurality of depressions comprise at least four depressions evenly distributed along a length of the tube, and
- wherein the precursor material is disposed within the plurality of depressions.
A vapor deposition process comprising:
- (i) directing a carrier gas into a precursor vessel comprising an inlet, an outlet, and defining an interior volume, wherein the vessel further comprises a tube disposed within the interior volume extending from the inlet to the outlet, the tube comprising sidewalls defining a flowpath through which the carrier gas flows and which includes a quantity of a precursor material therein, the sidewalls comprising an internal surface facing the flowpath having a plurality of depressions having a width and a depth, wherein the plurality of depressions comprise at least four depressions evenly distributed along a length of the tube, and wherein the precursor material is disposed within the plurality of depressions;
- (ii) vaporizing the precursor material within the tube;
- and
- (iii) directing the vaporized precursor material via the carrier gas to a reaction chamber for material deposition on a substrate.
Dependencies are inferred from the claim text.