Gallium nitride-based sintered body and method for manufacturing same
AssigneeTosoh Corporation
InventorsMasami Mesuda, Hideto Kuramochi, Yuya Tsuchida
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Abstract
The object of the present invention is to provide a large-sized gallium nitride-based sintered body having a small oxygen amount and high strength, a large-sized gallium nitride-based sintered body having a small oxygen amount and containing a dopant, to obtain a highly crystalline gallium nitride thin film which has become a n-type or p-type semiconductor by a dopant, and methods for producing them. A gallium nitride-based sintered body, which has an oxygen content of at most 1 atm % and an average particle size (D50) of at least 1 μm and at most 150 μm.
Claims25
A gallium nitride-based sintered body, wherein the gallium nitride-based sintered body has an oxygen content of 1 atm % or less and an average particle size (D50) of from 5 μm to 150 μm, and
- wherein the gallium nitride-based sintered body has a deflective strength of at least 50 MPa.
Dependencies are inferred from the claim text.