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US 12,408,429 B2Granted
Integrated circuit device and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChien Yao Huang, Wun-Jie Lin, Kuo-Ji Chen
Life of this patent
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Abstract
An integrated circuit (IC) device includes a plurality of first doped regions of a first semiconductor type over at least one first well region of the first semiconductor type, and a second doped region of a second semiconductor type over a second well region of the second semiconductor type. The second semiconductor type is different from the first semiconductor type. The plurality of first doped regions is arranged along a first direction. Each of the plurality of first doped regions has a first length in the first direction. The second doped region extends in the first direction between at least two first doped regions among the plurality of first doped regions over a second length greater than the first length.
Claims20
An integrated circuit (IC) device, comprising:
- a plurality of first doped regions of a first semiconductor type over at least one first well region of the first semiconductor type;
- and
- a second doped region of a second semiconductor type over a second well region of the second semiconductor type, the second semiconductor type different from the first semiconductor type,
- wherein
- the plurality of first doped regions is arranged along a first direction,
- each of the plurality of first doped regions has a first length in the first direction,
- the second doped region extends in the first direction between at least two first doped regions among the plurality of first doped regions over a second length greater than the first length,
- the plurality of first doped regions is configured to receive a first power supply voltage,
- the second doped region is configured to receive a second power supply voltage different from the first power supply voltage,
- the plurality of first doped regions is arranged in at least two columns which are adjacent each other in the first direction and elongated in a second direction transverse to the first direction, and
- each column of the at least two columns includes multiple first doped regions among the plurality of first doped regions, wherein two immediately adjacent first doped regions among the multiple first doped regions in the column are separated from each other, in the second direction, by a region containing dopants of the second semiconductor type.
8 more elements
An integrated circuit (IC) device, comprising:
- a substrate;
- over the substrate, a plurality of first well regions of a first semiconductor type;
- over the substrate, a plurality of second well regions of a second semiconductor type different from the first semiconductor type, wherein
- the plurality of first well regions and the plurality of second well regions are elongated along a first direction,
- the plurality of first well regions and the plurality of second well regions are alternatingly arranged along a second direction transverse to the first direction, and
- two immediately adjacent first well regions among the plurality of first well regions are separated from each other, in the second direction,by a second well region among the plurality of second well regions;
- a plurality of first doped regions of the first semiconductor type over the plurality of first well regions;
- and
- two second doped regions of the second semiconductor type correspondingly over two end second well regions among the plurality of second well regions,
- wherein
- the plurality of first well regions and one or more further second well regions among the plurality of second well regions are arranged, in the second direction, between the two end second well regions,
- each of the plurality of first doped regions has a first length in the first direction,
- each of the two second doped regions has, in the first direction, a second length greater than the first length.
10 more elements
An integrated circuit (IC) device, comprising:
- a substrate;
- over the substrate, a first well region of a first semiconductor type;
- over the substrate, a second well region of a second semiconductor type different from the first semiconductor type, wherein the first well region and the second well region are elongated along a first direction;
- a plurality of first doped regions of the first semiconductor type over the first well region, wherein the plurality of first doped regions is discontinuous from each other and arranged at a first interval along the first direction;
- and
- a plurality of second doped regions of the second semiconductor type over the second well region, wherein the plurality of second doped regions is discontinuous from each other and arranged, along the first direction, at a second interval smaller than the first interval,
- wherein
- the first interval along the first direction between two immediately adjacent first doped regions among the plurality of first doped regions is a section of the first well region which contains dopants of the first semiconductor type at a concentration lower than the plurality of first doped regions, and the section of the first well region overlaps, in a second direction transverse to the first direction, multiple second doped regions among the plurality of second doped regions, and
- the second interval along the first direction between two immediately adjacent second doped regions among the plurality of second doped regions is a section of the second well region which contains dopants of the second semiconductor type at a concentration lower than the plurality of second doped regions.
6 more elements
Dependencies are inferred from the claim text.