Forksheet semiconductor structure including at least one bipolar junction transistor and method

A structure comprising:

• a dielectric body having a first sidewall and a second sidewall opposite the first sidewall;
• a first bipolar junction transistor comprising a first semiconductor nanosheet positioned laterally immediately adjacent to the first sidewall;
• and
• a second bipolar junction transistor comprising a second semiconductor nanosheet positioned laterally immediately adjacent to the second sidewall,
• wherein the first semiconductor nanosheet further has a first bottom surface, a first top surface opposite the first bottom surface, a first proximal side immediately adjacent to the first sidewall, and a first distal side opposite the first proximal side,
• wherein the first bipolar junction transistor comprises a first base region comprising:
• the first semiconductor nanosheet;
• and
• a first base semiconductor layer adjacent to the first bottom surface, the first distal side, and the first top surface,
• wherein the second semiconductor nanosheet further has a second bottom surface, a second top surface opposite the second bottom surface, a second proximal side immediately adjacent to the second sidewall, and a second distal side opposite the second proximal side, and
• wherein the second bipolar junction transistor comprises a second base region comprising:
• the second semiconductor nanosheet;
• and
• a second base semiconductor layer adjacent to the second bottom surface, the second distal side, and the second top surface.

A method comprising:

• forming a first transistor comprising a first semiconductor nanosheet positioned laterally immediately adjacent to a first sidewall of a dielectric body;
• and
• forming a second transistor comprising a second semiconductor nanosheet positioned laterally immediately adjacent to a second sidewall of the dielectric body opposite the first sidewall,
• wherein the forming of the first transistor comprises forming a bipolar junction transistor,
• wherein the first semiconductor nanosheet further has a first bottom surface, a first top surface opposite the first bottom surface, a first proximal side immediately adjacent to the first sidewall of the dielectric body, and a first distal side opposite the first proximal side, and
• wherein the first transistor comprises a base region comprising:
• the first semiconductor nanosheet;
• and
• a base semiconductor layer adjacent to the first bottom surface, the first distal side, and the first top surface.