Edge-emitting semiconductor laser diode and method of manufacturing the same

A method for manufacturing an edge-emitting semiconductor laser diode, the method comprising:

• growing a first portion of a semiconductor layer sequence on a growth substrate, the first portion comprising an active layer with a top surface;
• applying a mask layer to the top surface of the first portion of the semiconductor layer sequence facing away from the growth substrate;
• structuring the mask layer with trenches, exposing the first portion of the semiconductor layer sequence within the trenches;
• performing an etching process, wherein an etchant is introduced into the trenches and the active layer is at least partially etched away in a region of the trenches;
• removing the mask layer;
• growing a second portion of the semiconductor layer sequence over an entire surface of a side of the first portion of the semiconductor layer sequence facing away from the growth substrate thereby completing the semiconductor layer sequence;
• and
• cutting through the semiconductor layer sequence and the growth substrate in a region of the active layer etched away, wherein cut surfaces form facets of the edge-emitting semiconductor laser diode.