Vertical cavity light-emitting element and manufacturing method of the same

A vertical cavity light-emitting element comprising:

• a substrate;
• a first multilayer film reflecting mirror formed on the substrate;
• a semiconductor structure layer that includes a nitride semiconductor, the nitride semiconductor including a first semiconductor layer that is formed on the first multilayer film reflecting mirror and is a first conductivity type, a second semiconductor layer that is formed on the first semiconductor layer and is the first conductivity type, a light-emitting layer that is formed on the second semiconductor layer and is configured to expose a region including an outer edge of a top surface of the second semiconductor layer, and a third semiconductor layer that is formed on the light-emitting layer and is a second conductivity type opposite to the first conductivity type;
• an electrode formed on the top surface of the second semiconductor layer;
• an electrode layer electrically in contact with the third semiconductor layer in one region of a top surface of the third semiconductor layer;
• and
• a second multilayer film reflecting mirror constituting a resonator with the first multilayer film reflecting mirror, wherein
• the light-emitting layer has a quantum well structure including a well layer and a barrier layer,
• the first semiconductor layer has a composition of GaN,
• the second semiconductor layer has a composition of AlGaN, a thickness of the second semiconductor layer being thinner than a thickness of the first semiconductor layer, and a resistance of the second semiconductor layer being larger than a resistance of the first semiconductor layer.