Back to results
US 12,407,145 B2Granted
Vertical cavity surface emitting laser device with at least one bonding layer
AssigneeLumentum Operations LLC
InventorsQianhuan Yu, Ajit Vijay Barve
Life of this patent
Estimating the term…
Abstract
In some implementations, a vertical cavity surface emitting laser (VCSEL) device includes a substrate; a first mirror disposed over the substrate; a bonding layer disposed over the first mirror; and an active region disposed over the bonding layer. The substrate is a gallium arsenide (GaAs) substrate, and the active region is an indium phosphide (InP)-based active region.
Claims20
A vertical cavity surface emitting laser (VCSEL) device, comprising:
- a substrate;
- a first mirror disposed over the substrate;
- a bonding layer disposed over the first mirror;
- a first n-type layer disposed directly over the bonding layer;
- an active region disposed directly over the first n-type layer, wherein:
- the substrate is a gallium arsenide (GaAs) substrate, and
- the active region is an indium phosphide (InP)-based active region;
- a p-type layer disposed directly over the active region;
- a second n-type layer disposed over the active region;
- a tunnel junction disposed between the second n-type layer and the active region,
- wherein the tunnel junction overlaps a portion of the p-type layer and a portion of the second n-type layer;
- a second mirror disposed over the second n-type layer;
- a set of first contacts below the tunnel junction;
- and
- a set of second contacts disposed on the second n-type layer and adjacent to the second mirror.
12 more elements
A die, comprising:
- a gallium arsenide (GaAs) substrate;
- and
- a plurality of individual epitaxial structures disposed on the substrate,
- wherein each epitaxial structure, of the plurality of individual epitaxial structures, comprises:
- a first mirror disposed over the substrate;
- a bonding layer disposed over the first mirror;
- a first n-type layer disposed directly over the bonding layer;
- an indium phosphide (InP)-based active region disposed directly over the first n-type layer;
- a p-type layer disposed directly over the active region;
- a second n-type layer disposed over the active region;
- a tunnel junction disposed between the second n-type layer and the active region,
- wherein the tunnel junction overlaps a portion of the p-type layer and a portion of the second n-type layer;
- a second mirror disposed over the second n-type layer;
- a set of first contacts below the tunnel junction;
- and
- a set of second contacts on the second n-type layer adjacent to the second mirror.
13 more elements
A method of forming a vertical cavity surface emitting laser (VCSEL) device, comprising:
- forming a first epitaxial substructure on a gallium arsenide (GaAs) substrate;
- forming a second epitaxial substructure on an indium phosphide (InP) substrate;
- attaching, using a bonding layer, the first epitaxial substructure to the second epitaxial substructure to form an epitaxial structure;
- and
- removing the InP substrate from the epitaxial structure,
- wherein the VCSEL device comprises:
- a first mirror disposed over the GaAS substrate;
- the bonding layer disposed over the first mirror;
- a first n-type layer disposed directly over the bonding layer;
- an active region disposed directly over the first n-type layer;
- a p-type layer disposed directly over the active region;
- a second n-type layer disposed over the active region;
- a tunnel junction disposed between the second n-type layer and the active region,
- wherein the tunnel junction overlaps a portion of the p-type layer and a portion of the second n-type layer;
- a second mirror disposed over the second n-type layer;
- a set of first contacts below the tunnel junction;
- and
- a set of second contacts disposed on the second n-type layer and adjacent to the second mirror.
15 more elements
Dependencies are inferred from the claim text.